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NP2300SBT3G Datasheet(PDF) 2 Page - ON Semiconductor |
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NP2300SBT3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page NP Series http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics (Note 1) Symbol Min Typ Max Unit Breakover Voltage (Both Polarities) NP0640SxT3G NP0720SxT3G NP0900SxT3G NP1100SxT3G NP1300SxT3G NP1500SxT3G NP1800SxT3G NP2100SxT3G NP2300SxT3G NP2600SxT3G NP3100SxT3G NP3500SxT3G V(BO) 77 88 98 130 160 180 220 240 260 300 350 400 V Off−State Voltage (Both Polarities) NP0640SxT3G NP0720SxT3G NP0900SxT3G NP1100SxT3G NP1300SxT3G NP1500SxT3G NP1800SxT3G NP2100SxT3G NP2300SxT3G NP2600SxT3G NP3100SxT3G NP3500SxT3G VDRM 58 65 75 90 120 140 170 180 190 220 275 320 V Off State Current ( VD1 = 50 V ) Both Polarities ( VD2 = VDRM ) Both Polarities IDRM1 IDRM2 2.0 5.0 mA mA Holding Current (Both Polarities) (Note 4) VS = 500 V; IT = 2.2 A IH 150 250 − mA On−State Voltage IT = 1.0 A(pk) (PW = 300 mSec, DC = 2%) VT − − 4.0 V Maximum Non−Repetitive Rate of Change of On−State Current (Note 1) (Haefely test method, 1.0 pk < 100 A) di/dt − − 500 A/ mSec Critical Rate of Rise of Off−State Voltage (Linear Waveform, VD = 0.8 VDRM, TJ = 25°C) dv/dt 5.0 − − kV/ mSec CAPACITANCE Characteristics Symbol Typ Unit A B C (f=1.0 MHz, 1.0 Vrms, 2 Vdc bias) NP0640SxT3G NP0720SxT3G NP0900SxT3G NP1100SxT3G NP1300SxT3G NP1500SxT3G NP1800SxT3G NP2100SxT3G NP2300SxT3G NP2600SxT3G NP3100SxT3G NP3500SxT3G Co 70 70 70 70 60 60 60 60 40 40 40 40 125 125 125 125 100 100 100 100 60 60 60 60 210 210 210 210 180 180 180 180 100 100 100 100 pF 1. Electrical parameters are based on pulsed test methods. 2. di/dt must not be exceeded of a maximum of 100 A/ mSec in this application. 3. Measured under pulsed conditions to reduce heating 4. Allow cooling before testing second polarity. |
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Similar Description - NP2300SBT3G |
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