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NTD4815NH Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NTD4815NH
Description  Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTD4815NH Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 0
1
Publication Order Number:
NTD4815NH/D
NTD4815NH
Power MOSFET
30 V, 35 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low RG
These are Pb−Free Devices
Applications
CPU Power Delivery
DC−DC Converters
High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°C
ID
8.5
A
TA = 85°C
6.5
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
1.92
W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
ID
6.9
A
TA = 85°C
5.3
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
1.26
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
35
A
TC = 85°C
27
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
32.6
W
Pulsed Drain
Current
tp=10ms
TA = 25°C
IDM
87
A
Current Limited by Package
TA = 25°C
IDmaxPkg
35
A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+175
°C
Source Current (Body Diode)
IS
27
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 15.4 Apk, L = 0.3 mH, RG = 25 W)
EAS
35.6
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V(BR)DSS
RDS(ON) MAX
ID MAX
30 V
15 m
W @ 10 V
35 A
27.7 m
W @ 4.5 V
G
S
N−CHANNEL MOSFET
D
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
Gate
2
Drain 3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
Y
= Year
WW
= Work Week
4815NH= Device Code
G
= Pb−Free Package
DPAK
CASE 369C
(Bent Lead)
STYLE 2
IPAK
CASE 369D
(Straight Lead
DPAK)
1 2
3
4
1
2
3
4
3 IPAK
CASE 369AC
(Straight Lead)
1
2
3
4


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