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NTD4810NH Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NTD4810NH
Description  Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTD4810NH Datasheet(HTML) 2 Page - ON Semiconductor

   
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NTD4810NH
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THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
3.0
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
3.5
Junction−to−Ambient − Steady State (Note 1)
RqJA
75
Junction−to−Ambient − Steady State (Note 2)
RqJA
117
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
27
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
1.0
mA
TJ = 125°C
10
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.5
2.5
V
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
5.2
mV/
°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 to
11.5 V
ID = 30 A
8.0
10
m
W
ID = 15 A
7.8
VGS = 4.5 V
ID = 30 A
14.1
16.7
ID = 15 A
13.2
Forward Transconductance
gFS
VDS = 15 V, ID = 15 A
9.0
S
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
1225
pF
Output Capacitance
Coss
280
Reverse Transfer Capacitance
Crss
145
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
8.9
12
nC
Threshold Gate Charge
QG(TH)
2.5
Gate−to−Source Charge
QGS
3.6
Gate−to−Drain Charge
QGD
3.9
Total Gate Charge
QG(TOT)
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
22.5
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
10.6
ns
Rise Time
tr
19.2
Turn−Off Delay Time
td(off)
11.7
Fall Time
tf
3.6
Turn−On Delay Time
td(on)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
6.2
ns
Rise Time
tr
18
Turn−Off Delay Time
td(off)
18.5
Fall Time
tf
2.2
3. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.


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