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NTD4810NH Datasheet(PDF) 5 Page - ON Semiconductor

Part No. NTD4810NH
Description  Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTD4810NH Datasheet(HTML) 5 Page - ON Semiconductor

   
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NTD4810NH
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5
TYPICAL PERFORMANCE CURVES
Crss
15
0
10
15
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
0
VGS
VDS
2000
55
VGS = 0 V
VDS = 0 V
TJ = 25°C
Ciss
Coss
Crss
Ciss
1500
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
0
0.4
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
1
VGS = 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6
0.7
1.0
5
10
15
tr
td(off)
td(on)
tf
10
VDD = 15 V
ID = 30 A
VGS = 11.5 V
0.8
0.9
20
30
25
TJ = 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
1000
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1 ms
100
ms
10 ms
dc
10
ms
20
1
100
0
25
TJ, JUNCTION TEMPERATURE (°C)
ID = 21 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50
75
175
20
60
100
125
150
500
40
10
50
70
30
0
6
0
QG, TOTAL GATE CHARGE (nC)
9
20
10
TJ = 25°C
Q2
QT
15
3
12
2
4
6
8
12
14
16
18
Q1
750
1750
1250
250
25
10
8
0
16
4
12
20
0.5
1.1
VGS
VDS
22
24


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