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NST489AMT1 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NST489AMT1
Description  High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NST489AMT1 Datasheet(HTML) 2 Page - ON Semiconductor

   
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NST489AMT1
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (IC = 10 mA, IB = 0)
V(BR)CEO
30
V
Collector−Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
50
V
Emitter − Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
V(BR)EBO
5.0
V
Collector Cutoff Current (VCB = 30 V, IE = 0)
ICBO
0.1
mA
Collector−Emitter Cutoff Current (VCES = 30 V)
ICES
0.1
mA
Emitter Cutoff Current (VEB = 4.0 V)
IEBO
0.1
mA
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 1.0 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
hFE
300
300
200
500
900
Collector − Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 1.0 mA)
VCE(sat)
0.10
0.06
0.05
0.200
0.125
0.075
V
Base − Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A)
VBE(sat)
1.1
V
Base − Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V)
VBE(on)
1.1
V
Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz
fT
200
300
MHz
Output Capacitance (f = 1.0 MHz)
Cobo
15
pF
4. Pulsed Condition: Pulse Width
≤ 300 msec, Duty Cycle ≤ 2%.
Figure 1. VCE (sat) versus Ib
0.001
0.2
0.01
0.1
1.0
0
0.1
Ib (A)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure 2. VCE (sat) versus Ic
0.001
2
0.01
0.1
1.0
0
0.1
Ic (A)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
IC = 2 A
IC = 1 A
IC = 500 mA
IC = 100 mA
Ic/Ib = 100
Ic/Ib = 10
Figure 3. hFE versus Ic
Figure 4. VBE(on) versus Ic
0.001
2
0.01
0.1
1.2
0
Ic (A)
0.2
0.4
0.6
0.8
1
1.0
+125
°C
+25
°C
−55
°C
VCE = 5 V
0.001
2
0.01
0.1
800
0
100
Ic (A)
200
300
400
500
600
700
1
+125
°C
+25
°C
−55
°C
VCE = 5 V


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