NSS40200UW6T1G datasheet(3/5 Pages) ONSEMI

Part #	NSS40200UW6T1G

Description	40 V, 4.0 A, Low VCE(sat) PNP Transistor

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NSS40200UW6T1G

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Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

0.001

IC, COLLECTOR CURRENT (A)

0

0.01

0.1

1.0

10

0.05

0.10

0.15

IC/IB = 10

VCE(sat) = 150°C

25

°C

−55

°C

0.001

IC, COLLECTOR CURRENT (A)

0.20

0.05

0

0.01

0.1

1.0

10

0.10

0.15

IC/IB = 100

VCE(sat) = −55°C

25

°C

150

°C

0.25

150

°C

25

°C

−55

°C

Figure 3. DC Current Gain vs.

Collector Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

Figure 5. Base Emitter Turn−On Voltage vs.

Collector Current

Figure 6. Saturation Region

IC, COLLECTOR CURRENT (A)

0.01

0.001

1.0

0.4

0.1

0.001

IC, COLLECTOR CURRENT (A)

0.6

0.4

0.2

0.1

IB, BASE CURRENT (mA)

0.01

1.0

0.6

0.4

0.2

0

0.01

0.1

10

1.0

100

0.1

0.6

0.8

0.2

150

°C

25

°C

−55

°C

0.8

1.0

10

100

200

300

400

500

600

0.001

0.01

0.1

1

10

150

°C (5 V)

25

°C (5 V)

−55

°C (5 V)

150

°C (2 V)

25

°C (2 V)

−55

°C (2 V)

1.0

0.9

1.1

10

IC = 500 mA

10 mA

100 mA

300 mA

VCE = −1.0 V

0.30

700

0.7

0.5

0.3

0.9

0.5

0.7

0.3

IC/IB = 10

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