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NP0640SXT3G Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NP0640SXT3G
Description  Thyristor Surge Protectors High Voltage Bidirectional
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NP0640SXT3G Datasheet(HTML) 2 Page - ON Semiconductor

   
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics (Note 1)
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
V(BO)
77
88
98
130
160
180
220
240
260
300
350
400
V
Off−State Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
VDRM
58
65
75
90
120
140
170
180
190
220
275
320
V
Off State Current
( VD1 = 50 V ) Both Polarities
( VD2 = VDRM ) Both Polarities
IDRM1
IDRM2
2.0
5.0
mA
mA
Holding Current (Both Polarities) (Note 4) VS = 500 V; IT = 2.2 A
IH
150
250
mA
On−State Voltage IT = 1.0 A(pk) (PW = 300 mSec, DC = 2%)
VT
4.0
V
Maximum Non−Repetitive Rate of Change of On−State Current (Note 1)
(Haefely test method, 1.0 pk < 100 A)
di/dt
500
A/
mSec
Critical Rate of Rise of Off−State Voltage
(Linear Waveform, VD = 0.8 VDRM, TJ = 25°C)
dv/dt
5.0
kV/
mSec
CAPACITANCE
Characteristics
Symbol
Typ
Unit
A
B
C
(f=1.0 MHz, 1.0 Vrms, 2 Vdc bias)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
Co
70
70
70
70
60
60
60
60
40
40
40
40
125
125
125
125
100
100
100
100
60
60
60
60
210
210
210
210
180
180
180
180
100
100
100
100
pF
1. Electrical parameters are based on pulsed test methods.
2. di/dt must not be exceeded of a maximum of 100 A/
mSec in this application.
3. Measured under pulsed conditions to reduce heating
4. Allow cooling before testing second polarity.


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