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NLAS5223B Datasheet(PDF) 6 Page - ON Semiconductor

Part No. NLAS5223B
Description  Ultra−Low 0.5 ohm Dual SPDT Analog Switch
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NLAS5223B Datasheet(HTML) 6 Page - ON Semiconductor

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NLAS5223B, NLAS5223BL
http://onsemi.com
6
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
Test Conditions
VCC
(V)
VIS
(V)
Guaranteed Maximum Limit
Unit
25
°C
−40
°C to +85°C
Min
Typ*
Max
Min
Max
tON
Turn−On Time
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
2.3 − 4.5
1.5
50
60
ns
tOFF
Turn−Off Time
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
2.3 − 4.5
1.5
30
40
ns
tBBM
Minimum Break−Before−Make
Time
VIS = 3.0
RL = 50 W, CL = 35 pF
(Figure 2)
3.0
1.5
2
15
ns
Typical @ 25, VCC = 3.6 V
CIN
Control Pin Input Capacitance
3.5
pF
CNO/NC
NO, NC Port Capacitance
60
pF
CCOM
COM Port Capacitance When Switch is Enabled
200
pF
*Typical Characteristics are at 25
°C.
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
VCC
(V)
25
°C
Unit
Typical
BW
Maximum On−Channel −3 dB
Bandwidth or Minimum
Frequency Response
VIN centered between VCC and GND
(Figure 5)
1.65 − 4.5
19
MHz
VONL
Maximum Feed−through On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND (Figure 5)
1.65 − 4.5
−0.06
dB
VISO
Off−Channel Isolation
f = 100 kHz; VIS = 1 V RMS; CL = 5.0 pF
VIN centered between VCC and GND (Figure 5)
1.65 − 4.5
−68
dB
Q
Charge Injection Select Input to
Common I/O
VIN = VCC to GND, RIS = 0 W, CL = 1.0 nF
Q = CL x DVOUT (Figure 6)
1.65 − 4.5
38
pC
THD
Total Harmonic Distortion
THD + Noise
FIS = 20 Hz to 20 kHz, RL = Rgen = 600 W, CL = 50 pF
VIS = 2.0 V RMS
3.0
0.08
%
VCT
Channel−to−Channel Crosstalk
f = 100 kHz; VIS = 1.0 V RMS, CL = 5.0 pF, RL = 50 W
VIN centered between VCC and GND (Figure 5)
1.65 − 4.5
−70
dB
10. Off−Channel Isolation = 20log10 (VCOM/VNO), VCOM = output, VNO = input to off switch.


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