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NJT4030P Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NJT4030P
Description  Bipolar Power Transistors PNP Silicon
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NJT4030P Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. P2
1
Publication Order Number:
NJT4030P/D
NJT4030P
Preferred Device
Product Preview
Bipolar Power Transistors
PNP Silicon
Features
Collector −Emitter Sustaining Voltage −
VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain −
hFE
= 200 (Min) @ IC = 1.0 Adc
= 100 (Min) @ IC = 3.0 Adc
Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc
= 0.500 Vdc (Max) @ IC = 3.0 Adc
SOT−223 Surface Mount Packaging
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
These are Pb−Free Devices
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
SOT−223
CASE 318E
STYLE 1
MARKING
DIAGRAM
Schematic
C 2,4
B 1
E 3
Top View Pinout
C
CE
B
4
12
3
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
PIN ASSIGNMENT
http://onsemi.com
1
4030P
G
AYW
A
= Assembly Location
Y
Year
W
= Work Week
4030P
= Specific Device Code
G
= Pb−Free Package


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