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NIS5102QP1HT1 Datasheet(PDF) 4 Page - ON Semiconductor

Part # NIS5102QP1HT1
Description  High Side SMART HotPlug IC/Inrush Limiter/Circuit Breaker
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NIS5102QP1HT1 Datasheet(HTML) 4 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (continued) (VCC = 12 V, RLIMIT = 36 W, CCharge = 100 pF, TJ = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
CURRENT LIMIT
Current Limit (Short Circuit, RLIMIT = 36 W)
ILIM1
3.8
4.8
5.8
A
Current Limit (Overload, RLIMIT = 36 W) (Note 3)
ILIM2
7.0
7.8
8.6
A
ENABLE/TIMER
Enable Voltage (Turn−On)
VENon
2.2
V
Enable Voltage (Turn−Off)
VENoff
1.6
V
Charging Current (Into External Capacitor)
ICharge
65
77
88
mA
Turn−on Delay (Time from Enable High to Isource = 100 mA)
tdelay
2.2
ms
CHARGE PUMP
CCharge (Voltage on Pin 5 with Respect to Ground)
VCC = 18 Vdc
VCcharge
18
26
V
V
POWER GOOD
Power Good
→ High Z Signal when FET is Fully Enhanced
Low Z State Output Voltage (ISink = 2 mA)
Vpin7
230
300
mV
Leakage Current (Vpin7 = 12 V, High Z State)
ILeak
2.0
10
mA
Power Good Delay
(Time from Power FET is Fully Enhanced to Power Good FET Changing State)
tpwrgood
15
ms
TOTAL DEVICE
Bias Current (Operational, VCC = 12 V)
IBias
1.3
2.0
mA
Bias Current (Non−operational, VCC = 7 V))
IBias
400
700
mA
Minimum Operating Voltage
Vccmin
8.5
9.0
V
Enable/Timer
Input
Threshold
Source Voltage
Output Current
Figure 2. Timing Diagram for External Enabled Delay


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