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NILMS4501N Datasheet(PDF) 4 Page - ON Semiconductor

Part No. NILMS4501N
Description  Power MOSFET with Current Mirror FET
Download  9 Pages
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NILMS4501N Datasheet(HTML) 4 Page - ON Semiconductor

   
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NILMS4501N
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
ID, DRAIN CURRENT (AMPS)
6
2
0.025
0.02
0.015
0.01
0.005
0.014
0
5
0
4
1.6
2
0.8
1.2
0.4
0
10
15
2
1
0
0.8
0.9
1
0.5
0.6
0.7
0.3
0.4
0.2
0.1
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
Figure 3. Transfer Characteristics
Figure 4. On−Resistance versus
Drain Current and Temperature
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance versus
Drain Current and Temperature
Figure 6. On−Resistance versus Gate Voltage
and Temperature
VDS =10 V
VGS = 4.5 V
TJ = − 55°C
ID = 10 A
4
3
6
5
VGS = 10 V
4.5 V
3.0 V
2.8 V
TJ = 125°C
TJ = 175°C
510
15
20
0.002
0.004
0.006
0.008
0.010
0.012
3
7
510
TJ = 25°C
TJ = 175°C
TJ = −55°C
2.6 V
2.4 V
2.2 V
20
TJ = 25°C
0.016
0.018
0.024
TJ = 125°C
0
0.03
10
5
0
2
1
1.5
0.5
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
15
25
VGS = 10 V
4.6 V
3.0 V
3.2 V
2.6 V
2.4 V
2.2 V
0.020
0.022
ID, DRAIN CURRENT (AMPS)
0.014
0
VGS = 10 V
510
15
20
0.002
0.004
0.006
0.008
0.010
0.012
TJ = 25°C
TJ = 175°C
TJ = −55°C
0.016
0.018
TJ = 125°C
0
58
9
TJ = 25°C
TJ = 175°C
TJ = −55°C
TJ = 125°C
3.6
2.8
3.2
2.4
2.8 V
3.6 V
4.0 V


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