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NILMS4501N Datasheet(PDF) 5 Page - ON Semiconductor

Part No. NILMS4501N
Description  Power MOSFET with Current Mirror FET
Download  9 Pages
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NILMS4501N Datasheet(HTML) 5 Page - ON Semiconductor

   
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NILMS4501N
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.01
1000
100
−50
2.0
1.5
1.0
0.5
0
Figure 7. On−Resistance Variation with
Temperature
Figure 8. Drain−To−Source Leakage
Current versus Voltage
Figure 9. Current Ratio versus RSENSE
Figure 10. Current Ratio versus VGS
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. IRATIO versus VSOURCE
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Current Ratio versus VSENSE
VGS = 0 V
TJ = 175°C
VGS = 10 V
ID = 3 A
0
150
50
200
10
1.0
10
TJ = 25°C
2.5
0.1
100
1E5
1E6
TJ = 125°C
5
152025
RSENSE, EXTERNAL RESISTOR VALUE ON SENSE PIN (W)
ID = 1 A
VGS = 4.5 V
0
500
1000
1500
2500
−0.01 −0.005
0
0.005
0.01
0.015
0.02
0.025 0.03
VSOURCE, VOLTAGE DROP FROM SOURCE PIN TO GROUND (V)
ID = 1 A
VSENSE = 0 V
VGS = 4.5 V
0
200
400
600
800
1000
1200
1400
1600
0
2
4
6
8
1012
1416
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
200
250
300
350
400
500
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VSENSE, VOLTAGE DROP FROM SENSE PIN TO GROUND (V)
ID = 1 A
VSOURCE = 0 V
VGS = 4.5 V
0
400
800
1200
1600
2000
−0.01
−0.005
0
0.005
0.01
0.02
TJ = 125°C
1800
2000
TJ = 175°C
TJ = 25°C
TJ = −55°C
450
ID = 1 A
VSENSE = 0 V
VSOURCE = 0 V
TJ = 175°C
TJ = 125°C
TJ = −55°C
TJ = 25°C
2000
TJ = 175°C
125
°C
25
°C
TJ = −55°C
200
600
1000
1400
1800
0.015
125
°C
175
°C
25
°C
−55
°C


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