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NIF5003N Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NIF5003N
Description  Self−Protected FET with Temperature and Current Limit
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NIF5003N Datasheet(HTML) 2 Page - ON Semiconductor

   
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NIF5003N
http://onsemi.com
2
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = −40°C to 150°C)
V(BR)DSS
42
40
46
45
51
51
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
0.6
2.5
5.0
mAdc
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
IGSS
50
125
mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.7
5.0
2.2
Vdc
mV/
°C
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C)
RDS(on)
53
95
68
123
mW
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C)
RDS(on)
63
105
76
135
mW
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
VSD
0.95
1.1
V
SWITCHING CHARACTERISTICS
Turn−on Time
(Vin to 90% ID)
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
T(on)
16
20
ms
Turn−off Time
(Vin to 10% ID)
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
T(off)
80
100
ms
Slew Rate On
RL = 4.7 W,
Vin = 0 to 10 V, VDD = 12 V
−dVDS/dton
1.4
V
/ms
Slew Rate Off
RL = 4.7 W,
Vin = 10 to 0 V, VDD = 12 V
dVDS/dtoff
0.5
V
/ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit
(VGS = 5.0 Vdc)
VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C)
ILIM
12
7.0
18
13
24
18
Adc
Current Limit
(VGS = 10 Vdc)
VDS = 10 V (VGS = 10 Vdc, TJ = 150°C)
ILIM
18
13
22
18
30
25
Adc
Temperature Limit (Turn−off)
VGS = 5.0 Vdc
TLIM(off)
150
175
200
°C
Thermal Hysteresis
VGS = 5.0 Vdc
DTLIM(on)
15
°C
Temperature Limit (Turn−off)
VGS = 10 Vdc
TLIM(off)
150
165
185
°C
Thermal Hysteresis
VGS = 10 Vdc
DTLIM(on)
15
°C
Input Current during Thermal Fault
VDS = 35 V, (VGS = 5.0 V, Tj = 150°C)
Ig(fault)
0.6
mA
Input Current during Thermal Fault
VDS = 35 V, (VGS = 10 V, Tj = 150°C)
Ig(fault)
2.0
mA
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
4000
V
Electro−Static Discharge Capability
Machine Model (MM)
ESD
400
V
4. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.


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