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NIF5003N Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NIF5003N
Description  Self−Protected FET with Temperature and Current Limit
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NIF5003N Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 2
1
Publication Order Number:
NIF5003N/D
NIF5003N
Preferred Device
Self−Protected FET
with Temperature and
Current Limit
42 V, 14 A, Single N−Channel, SOT−223
HDPlus
™ devices are an advanced series of power MOSFETs which
utilize ON Semiconductors latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
42
Vdc
Gate−to−Source Voltage
VGS
"14
Vdc
Drain Current
Continuous
ID
Internally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD
1.25
1.9
W
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
12
100
65
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
VDS = 40 Vdc, IL = 3.2 Apk, L = 120 mH,
RG = 25 W)
EAS
400
mJ
Operating and Storage Temperature Range
(Note 3)
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412
″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1
″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
3. Normal pre−fault operating range. See thermal limit range conditions.
MPWR
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
RG
Overvoltage
Protection
ESD Protection
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
VDSS
(Clamped)
RDS(on) TYP
ID MAX
(Limited)
42 V
53 m
W @ 10 V
14 A
http://onsemi.com
SOT−223
CASE 318E
STYLE 3
1
MARKING DIAGRAM
A
= Assembly Location
Y
= Year
W
= Work Week
5003N
= Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
2
3
4
1
2
3
4
GATE
DRAIN
SOURCE
DRAIN


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