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NID5004N Datasheet(PDF) 3 Page - ON Semiconductor

Part No. NID5004N
Description  Self−Protected FET with Temperature and Current Limit
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NID5004N Datasheet(HTML) 3 Page - ON Semiconductor

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NID5004N
http://onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 V, ID = 2 mA)
V(BR)DSS
36
40
44
V
Zero Gate Voltage Drain Current
(VDS = 32 V, VGS = 0 V)
IDSS
27
100
mA
Gate Input Current
(VGS = 5.0 V, VDS = 0 V)
IGSS
45
200
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 150 mA)
Threshold Temperature Coefficient
VGS(th)
1.0
1.85
5.0
2.2
V
−mV/°C
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 10 V, ID = 2.0 A, TJ @ 25°C)
RDS(on)
110
130
mW
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 5.0 V, ID = 2.0 A, TJ @ 25°C)
(VGS = 5.0 V, ID = 2.0 A, TJ @ 150°C)
RDS(on)
130
240
150
270
mW
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
VSD
0.9
1.1
V
SWITCHING CHARACTERISTICS (Note 6)
Turn−on Delay Time
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 10% Vin to 10% ID
td(on)
97
115
ns
Turn−on Rise Time
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 10% ID to 90% ID
trise
282
300
ns
Turn−off Delay Time
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 90% Vin to 90% ID
td(off)
930
1020
ns
Turn−off Fall Time
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 90% ID to 10% ID
tfall
690
750
ns
Slew Rate ON
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 70% to 50% VDD
dVDS/dTon
64
V/ms
Slew Rate OFF
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 50% to 70% VDD
dVDS/dToff
28
V/ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 7)
Current Limit
VDS = 10 V, VGS = 5.0 V, TJ = 25°C (Note 8)
VDS = 10 V, VGS = 5.0 V, TJ = 100°C (Note 6, 8)
VDS = 10 V, VGS = 10 V, TJ = 25°C (Note 6, 8)
ILIM
4.0
4.0
6.5
5.5
7.9
11
11
A
Temperature Limit (Turn−off)
VGS = 5.0 V (Note 6)
TLIM(off)
150
180
200
°C
Thermal Hysteresis
VGS = 5.0 V
DTLIM(on)
10
°C
Temperature Limit (Turn−off)
VGS = 10 V (Note 6)
TLIM(off)
150
180
200
°C
Thermal Hysteresis
VGS = 10 V
DTLIM(on)
20
°C
Input Current during
Thermal Fault
VDS = 0 V, VGS = 5.0 V, TJ = TJ > T(fault) (Note 6)
VDS = 0 V, VGS = 10 V, TJ = TJ > T(fault) (Note 6)
Ig(fault)
5.5
12
5.2
11
mA
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electrostatic Discharge Capability
Human Body Model (HBM)
Machine Model (MM) (Note 6)
ESD
4000
400
V
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Not subject to Production Test
7. Fault conditions are viewed as beyond the normal operating range of the part.
8. Current limit measured at 380 ms after gate pulse.


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