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NGD8205NT4G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NGD8205NT4G
Description  Ignition IGBT 20 Amp, 350 Volt, N?묬hannel DPAK
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NGD8205NT4G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 7
1
Publication Order Number:
NGD8205N/D
NGD8205N
Ignition IGBT
20 Amp, 350 Volt, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil−on−Plug and Driver−on−Coil Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
Pb−Free Package is Available
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
390
V
Collector−Gate Voltage
VCER
390
V
Gate−Emitter Voltage
VGE
"15
V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
20
50
ADC
AAC
Continuous Gate Current
IG
1.0
mA
Transient Gate Current (t≤2 ms, f≤100 Hz)
IG
20
mA
ESD (Charged−Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
125
0.83
W
W/°C
Operating & Storage Temperature Range
TJ, Tstg −55 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
20 A, 350 V
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
E
G
DPAK
CASE 369C
STYLE 7
Device
Package
Shipping
ORDERING INFORMATION
NGD8205NT4
DPAK
2500 / Tape & Reel
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Y
= Year
WW
= Work Week
NGD8205N = Device Code
G= Pb−Free Package
RG
RGE
http://onsemi.com
NGD8205NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
YWW
NGD
8205NG
1
G
E
CC


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