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NGD8205NT4G Datasheet(PDF) 1 Page - ON Semiconductor |
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NGD8205NT4G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 7 1 Publication Order Number: NGD8205N/D NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • DPAK Package Offers Smaller Footprint for Increased Board Space • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) • Pb−Free Package is Available Applications • Ignition Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 390 V Collector−Gate Voltage VCER 390 V Gate−Emitter Voltage VGE "15 V Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50 ADC AAC Continuous Gate Current IG 1.0 mA Transient Gate Current (t≤2 ms, f≤100 Hz) IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD 8.0 kV ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 125 0.83 W W/°C Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 20 A, 350 V VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V C E G DPAK CASE 369C STYLE 7 Device Package Shipping† ORDERING INFORMATION NGD8205NT4 DPAK 2500 / Tape & Reel MARKING DIAGRAM †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 Y = Year WW = Work Week NGD8205N = Device Code G= Pb−Free Package RG RGE http://onsemi.com NGD8205NT4G DPAK (Pb−Free) 2500 / Tape & Reel YWW NGD 8205NG 1 G E CC |
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