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BSP110 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BSP110
Description  N-channel enhancement mode vertical D-MOS transistor
Download  12 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BSP110 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP110
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed-circuit board 40 mm
× 40 mm × 1.5 mm; mounting pad for the drain lead min.
6 cm2.
CHARACTERISTICS
Tj =25 °C unless otherwise specified
Drain-source voltage
VDS
max.
80 V
Drain-source voltage
(non-repetitive peak; tp ≤ 2 ms)
VDS(SM)
max.
100 V
Gate-source voltage (open drain)
± V
GSO
max.
20 V
Drain current (DC)
ID
max.
325 mA
Drain current (peak)
IDM
max.
650 mA
Total power dissipation up to Tamb =25 °C (note 1)
Ptot
max.
1.5 W
Storage temperature range
Tstg
−65 to + 150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient (note 1)
Rth j-a
=
83.3 K/W
Drain-source breakdown voltage
ID =10 µA; VGS =0
V(BR) DSS
min.
80 V
Drain-source leakage current
VDS = 60 V; VGS =0
IDSS
max.
1.0
µA
Gate-source leakage current
VGS = 20 V; VDS =0
IGSS
max.
100 nA
Gate threshold voltage
min.
max.
0.8
2.8
V
V
ID = 1 mA; VDS =VGS
IGS(th)
Drain-source ON-resistance (see Fig.4)
typ.
max.
7
10
ID = 150 mA; VGS =5V
RDS(on)
ID = 200 mA; VGS =10V
RDS(on)
typ.
max.
4.5
7
Transfer admittance
min.
typ.
75
150
mS
mS
ID = 200 mA; VDS =5V
| Yfs|
Input capacitance at f = 1 MHz;
typ.
max.
15
30
pF
pF
VDS = 10 V; VGS =0
Ciss


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