DB92125m-AAS/A1

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V

1.2

1.4

V

I

Reverse Voltage (V

6

V

I

Reverse Current (I

10

µA

V

Output

Collector-emitter Breakdown (BV

30

V

I

2 )

Collector-base Breakdown (BV

70

V

I

Emitter-collector Breakdown (BV

6

V

I

Collector-emitter Dark Current (I

50

nA

V

Collector-base Dark Current (I

20

nA

V

Transistor Static Gain ( h

200

10mA I

Coupled

On-state Collector Current (I

TIL111, TIL114

20

%

16mA I

TIL116

20

%

10mA I

TIL117

50

%

10mA I

Collector-emitter Saturation VoltageV

CE(SAT)

TIL111, TIL114

0.4

V

16mA I

TIL116

0.4

V

15mA I

TIL117

0.4

V

10mA I

Input to Output Isolation Voltage V

ISO

5300

V

RMS

See note 1

7500

V

PK

See note 1

Input-output Isolation Resistance R

ISO

Ω

V

Output Rise Time

tr

10

µs

V

Output Fall Time

tf

10

µs

R

fig 1

Note 1

Measured with input leads shorted together and output leads shorted together.

Note 2

Special Selections are available on request. Please consult the factory.

7/12/00

ELECTRICAL CHARACTERISTICS ( T

Output

Output

R

Input

10%

90%

90%

10%

t

on

t

r

FIG 1

V

CC

t

off

t

f