 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
H11B1X Datasheet(PDF) 2 Page - ISOCOM COMPONENTS |
|
||||||||||||||||||||||||||||||
H11B1X Datasheet(HTML) 2 Page - ISOCOM COMPONENTS |
|
|
2 / 3 page 
PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V F) 1.2 1.5 V I F = 10mA Reverse Voltage (V R) 3 V I R = 10µA Reverse Current (I R) 10 µA V R = 3V Output Collector-emitter Breakdown (BV CEO) 30 V I C = 1mA (note 2) Collector-base Breakdown (BV CBO) 30 V I C = 100µA Emitter-collector Breakdown (BV ECO) 5 V I E = 100µA H FE 16K V CE = 5V, IC = 5mA Collector-emitter Dark Current (I CEO) 100 nA V CE = 10V Coupled Current Transfer Ratio ( CTR )(Note 2) H11B1 500 % 1mA I F , 5V VCE H11B2 200 % 1mA I F , 5V VCE H11B3 100 % 1mA I F , 5V VCE Collector-emitter Saturation VoltageV CE(SAT) 1.0 V 1mA I F , 1mA IC Input to Output Isolation Voltage V ISO 5300 V RMS (note 1) 7500 V PK (note 1) Input-output Isolation Resistance R ISO 5x1010 Ω V IO = 500V (note 1) Output Turn on Time ton 125 µs V CC= 10V, IC = 10mA, Output Turn off Time toff 100 µs R L = 100Ω , fig.1 ELECTRICAL CHARACTERISTICS ( T A = 25°C Unless otherwise noted ) Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. DB92167-AAS/A2 7/12/00 Input Output 10% 90% 10% 90% t off t r t on t f Output V CC = 10V I C = 10mA Input FIGURE 1 100 Ω |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
