NTJS4405NT4G datasheet(2/5 Pages) ONSEMI

Part #	NTJS4405NT4G

Description	Small Signal MOSFET 25 V, 1.2 A, Single, N?묬hannel, SC??8

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NTJS4405N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

25

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

30

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 20 V

TJ = 25°C

1.0

mA

TJ = 125°C

10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 8.0 V

100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.65

1.5

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

−2.0

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 0.6 A

249

350

mW

VGS = 2.7 V, ID = 0.2 A

299

400

VGS = 4.5 V, ID = 1.2 A

260

Forward Transconductance

gFS

VDS = 5.0 V, ID = 0.5 A

0.5

S

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = 10 V

49

60

pF

Output Capacitance

COSS

22.4

30

Reverse Transfer Capacitance

CRSS

8.0

12

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 5.0 V,

ID = 0.95 A

0.75

1.5

nC

Threshold Gate Charge

QG(TH)

0.10

Gate−to−Source Charge

QGS

0.30

0.50

Gate−to−Drain Charge

QGD

0.20

0.40

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDS = 6.0 V,

ID = 0.5 A, RG = 50 W

6.0

12

ns

Rise Time

tr

4.7

8.0

Turn−Off Delay Time

td(OFF)

25

35

Fall Time

tf

41

60

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 0.6 A

TJ = 25°C

0.82

1.20

V

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

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