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PBSS4220V Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. PBSS4220V
Description  20 V, 2 A NPN low VCEsat (BISS) transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBSS4220V Datasheet(HTML) 5 Page - NXP Semiconductors

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PBSS4220V_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 6 February 2006
5 of 13
Philips Semiconductors
PBSS4220V
20 V, 2 A NPN low VCEsat (BISS) transistor
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
Table 7:
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB =20V; IE =0A
-
-
0.1
µA
VCB =20V; IE =0A;
Tj = 150 °C
--50
µA
ICES
collector-emitter cut-off
current
VCE =20V; VBE = 0 V
-
-
0.1
µA
IEBO
emitter-base cut-off
current
VEB =5V; IC = 0 A
-
-
0.1
µA
hFE
DC current gain
VCE =2V; IC = 1 mA
220
480
-
VCE =2V; IC = 100 mA
220
440
-
VCE =2V; IC = 500 mA
[1] 220
410
-
VCE =2V; IC =1A
[1] 200
360
-
VCE =2V; IC =2A
[1] 120
220
-
VCEsat
collector-emitter
saturation voltage
IC = 100 mA; IB = 1 mA
-
35
55
mV
IC = 500 mA; IB =50mA
[1] -70
95
mV
IC = 1 A; IB =50mA
[1] -
145
180
mV
IC = 1 A; IB = 100 mA
[1] -
140
175
mV
IC = 2 A; IB = 100 mA
[1] -
275
355
mV
IC = 2 A; IB = 200 mA
[1] -
270
350
mV
RCEsat
collector-emitter
saturation resistance
IC = 1 A; IB = 100 mA
[1] -
140
175
m
VBEsat
base-emitter saturation
voltage
IC = 1 A; IB =50mA
[1] -
0.95
1.1
V
IC = 1 A; IB = 100 mA
[1] -
1
1.2
V
VBEon
base-emitter turn-on
voltage
VCE =5V; IC = 1 A
-
0.8
1.1
V
td
delay time
IC = 1 A; IBon =50mA;
IBoff = −50 mA
-9
-ns
tr
rise time
-
29
-
ns
ton
turn-on time
-
38
-
ns
ts
storage time
-
200
-
ns
tf
fall time
-
40
-
ns
toff
turn-off time
-
240
-
ns
fT
transition frequency
VCE =10V; IC =50mA;
f = 100 MHz
-
210
-
MHz
Cc
collector capacitance
VCB =10V; IE =ie =0A;
f = 1 MHz
-11
-
pF


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