NTJS3151PT2G datasheet(4/6 Pages) ONSEMI

Part #	NTJS3151PT2G

Description	Trench Power MOSFET 12 V, 3.3 A, Single P?묬hannel, ESD Protected SC??8

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Manufacturer	ONSEMI [ON Semiconductor]

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NTJS3151P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VGS = 0 V

4

08

1600

600

400

200

0

12

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0

4

1

0

Qg, TOTAL GATE CHARGE (nC)

TJ = 25°C

Coss

Ciss

Crss

ID = −3.3 A

TJ = 25°C

1000

6

4

2

3

Q2

Q1

10

1

1000

100

RG, GATE RESISTANCE (OHMS)

VDD = −6.0 V

ID = −1.0 A

VGS = −4.5 V

2

800

4.5

td(off)

td(on)

tf

tr

10

2

0.6

0

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

0.7

0.1

0

3

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source Voltage vs. Total

Gate Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

6

1400

810

QT

10000

0.2

0.5

0.3

1

2

4

0.4

1200

3.5

2.5

1.5

0.5

0.8 0.9

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