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NTJS3151PT2G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTJS3151PT2G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NTJS3151/D NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) • Gate Diodes for ESD Protection • Pb−Free Packages are Available Applications • High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS −12 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Steady State TA = 25 °C ID −2.7 A TA = 85 °C −2.0 t ≤ 5 s TA = 25 °C −3.3 Power Dissipation (Note 1) Steady State TA = 25 °C PD 0.625 W Pulsed Drain Current tp = 10 ms IDM −8.0 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −0.8 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max Units Junction−to−Ambient – Steady State RqJA 200 °C/W Junction−to−Ambient − t ≤ 5 s RqJA 141 Junction−to−Lead – Steady State RqJL 102 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). SC−88/SOT−363 CASE 419B STYLE 28 MARKING DIAGRAM & PIN ASSIGNMENT http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION TJ M G G 1 6 1 TJ = Device Code M = Date Code G = Pb−Free Package DD S DD G (Note: Microdot may be in either location) V(BR)DSS RDS(on) Typ ID Max −12 V 45 mW @ −4.5 V 67 mW @ −2.5 V 133 mW @ −1.8 V −3.3 A Top View SC−88 (SOT−363) D D S D D 6 5 4 1 2 3 G S D G 3 kW |
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