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NTJS4151P Datasheet(PDF) 3 Page - ON Semiconductor

Part No. NTJS4151P
Description  Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTJS4151P Datasheet(HTML) 3 Page - ON Semiconductor

   
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NTJS4151P
http://onsemi.com
3
0
1
2
3
4
024
68
VGS = −1.8 V
VGS = −2.0 V
VGS = −2.4 V
VGS = −2.8 V to 6.0 V
VGS = −1.6 V
VGS = −1.0 V
VGS = −1.4 V
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
TJ = 25°C
0
1
2
3
4
5
01
2
3
4
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 2. On−Region Characteristics
VDS w −10 V
0
0.1
0.2
0.3
0.4
0.5
02
46
ID = −3.3 A
TJ = 25°C
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
VGS = −1.8 V
TJ = 25°C
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
−50
−25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
ID = −3.3 A
VGS = 4.5 V
100
1000
10000
100000
04
8
12
16
20
Figure 6. Drain−to−Source Leakage Current
versus Voltage
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 150°C
VGS = −1.2 V
.
0
0.1
0.2
0.3
0.4
0.5
0.6
12
3
4
5
VGS = −2.5 V
VGS = −4.5 V


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