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NTJS4151P Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NTJS4151P
Description  Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTJS4151P Datasheet(HTML) 2 Page - ON Semiconductor

   
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NTJS4151P
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
−12
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = −16 V,
VDS = 0 V
TJ = 25°C
−1.0
mA
TJ = 85°C
−5.0
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±4.5 V
±1.5
mA
VDS = 0 V, VGS = ±12 V
±10
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−0.40
−1.2
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
4.0
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −3.3 A
47
60
mW
VGS = −2.5 V, ID = −2.3 A
70
85
VGS = −1.8 V, ID = −1.0 A
180
205
Forward Transconductance
gFS
VGS = −10 V, ID = −3.3 A
12
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
850
pF
Output Capacitance
COSS
160
Reverse Transfer Capacitance
CRSS
110
Total Gate Charge
QG(TOT)
VGS = −4.5 V, VDS = −10 V,
ID = −3.3 A
10
nC
Gate−to−Source Charge
QGS
1.5
Gate−to−Drain Charge
QGD
2.8
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(ON)
VGS = −4.5 V, VDD = −10 V,
ID = −1.0 A, RG = 6.0 W
0.85
ms
Rise Time
tr
1.7
Turn−Off Delay Time
td(OFF)
2.7
Fall Time
tf
4.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = −1.3 A,
TJ = 25°C
−0.75
−1.2
V
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100
A/ms,
IS = −1.3 A
63
ns
Charge Time
Ta
9.0
Discharge Time
Tb
54
Reverse Recovery Charge
QRR
0.23
nC
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.


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