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NTJS4151P Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NTJS4151P
Description  Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTJS4151P Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 1
1
Publication Order Number:
NTJS4151P/D
NTJS4151P
Trench Power MOSFET
−20 V, −4.2 A, Single P−Channel, SC−88
Features
Leading Trench Technology for Low RDS(ON) Extending Battery Life
SC−88 Small Outline (2x2 mm) for Maximum Circuit Board
Utilization, Same as SC−70−6
Gate Diodes for ESD Protection
Pb−Free Package is Available
Applications
High Side Load Switch
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25 °C
ID
−3.3
A
TA = 85 °C
−2.4
t ≤ 5 s
TA = 25 °C
−4.2
Power Dissipation
(Note 1)
Steady
State
TA = 25 °C
PD
1.0
W
Pulsed Drain Current
tp = 10 ms
IDM
−10
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−1.3
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
ESD
Human Body Model (HBM)
ESD
4000
V
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State
RqJA
125
°C/W
Junction−to−Ambient − t ≤ 5 s
RqJA
75
Junction−to−Lead – Steady State
RqJL
45
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Device
Package
Shipping
ORDERING INFORMATION
NTJS4151PT1
SC−88
3000 / Tape & Reel
Top View
http://onsemi.com
SC−88 (SOT−363)
D
D
S
D
D
6
5
4
1
2
3
V(BR)DSS
RDS(on) Typ
ID Max
47 mW @ −4.5 V
70 mW @ −2.5 V
180 mW @ −1.8 V
−4.2 A
NTJS4151PT1G
SC−88
(Pb−Free)
3000 / Tape & Reel
G
−20 V
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SC−88/SOT−363
CASE 419B
MARKING DIAGRAM &
PIN ASSIGNMENT
TY M G
G
1
6
1
TY
= Device Code
M
= Date Code
G
= Pb−Free Package
DD
S
DD
G
(Note: Microdot may be in either location)


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