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NTJS3151P Datasheet(PDF) 4 Page - ON Semiconductor

Part No. NTJS3151P
Description  Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTJS3151P Datasheet(HTML) 4 Page - ON Semiconductor

   
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NTJS3151P
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 0 V
4
08
1600
600
400
200
0
12
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
4
1
0
Qg, TOTAL GATE CHARGE (nC)
TJ = 25°C
Coss
Ciss
Crss
ID = −3.3 A
TJ = 25°C
1000
6
4
2
3
Q2
Q1
10
1
1000
100
100
RG, GATE RESISTANCE (OHMS)
VDD = −6.0 V
ID = −1.0 A
VGS = −4.5 V
2
800
4.5
td(off)
td(on)
tf
tr
10
2
0.6
0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
VGS = 0 V
TJ = 25°C
0.7
0.1
0
3
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
6
1400
810
QT
10000
0.2
0.5
0.3
1
2
4
0.4
1200
3.5
2.5
1.5
0.5
0.8 0.9


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