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BF1206F Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BF1206F
Description  Dual N-channel dual gate MOSFET
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF1206F Datasheet(HTML) 2 Page - NXP Semiconductors

 
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BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
2 of 20
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
1.4 Quick reference data
2.
Pinning information
3.
Ordering information
Table 1:
Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
VDS
drain-source voltage (DC)
-
-
6
V
ID
drain current (DC)
-
-
30
mA
|yfs|
forward transfer admittance
ID =4mA
amplifier A
17
22
32
mS
amplifier B
17
22
32
mS
Ciss(G1)
input capacitance at gate1
ID = 4 mA; f = 100 MHz
amplifier A
-
2.4
2.9
pF
amplifier B
-
1.7
2.2
pF
NF
noise figure
ID = 4 mA
amplifier A; f = 400 MHz
-
1.0
1.6
dB
amplifier B; f = 800 MHz
-
1.0
1.6
dB
Xmod
cross modulation
input level for k = 1 % at
40 dB AGC
amplifier A
92
97
-
dB
µV
amplifier B
93
98
-
dB
µV
Table 2:
Discrete pinning
Pin
Description
Simplified outline
Symbol
1
gate1 (AMP A)
2
source
3
gate1 (AMP B)
4
drain (AMP B)
5
drain (AMP A)
6
gate2
12
3
4
5
6
sym111
AMP A
AMP B
G1A
S
G1B
G2
DA
DB
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BF1206F
-
plastic surface mounted package; 6 leads
SOT666


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