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BF1206F Datasheet(PDF) 11 Page - NXP Semiconductors

Part No. BF1206F
Description  Dual N-channel dual gate MOSFET
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF1206F Datasheet(HTML) 11 Page - NXP Semiconductors

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BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
11 of 20
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
[1]
Calculated from measured S-parameters.
[2]
Measured in Figure 32 test circuit.
8.3.1 Graphs for amplifier B
Xmod
cross modulation
input level for k=1%;fw = 50 MHz; funw =60MHz [2]
at 0 dB AGC
89
-
-
dB
µV
at 10 dB AGC
-
85
-
dB
µV
at 40 dB AGC
93
98
-
dB
µV
Table 11:
Dynamic characteristics for amplifier B …continued
Common source; Tamb =25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol Parameter
Conditions
Min
Typ
Max Unit
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(B) = 2.8 V; Tj =25 °C.
(1) VG1-S(B) = 1.3 V.
(2) VG1-S(B) = 1.2 V.
(3) VG1-S(B) = 1.1 V.
(4) VG1-S(B) = 1.0 V.
(5) VG1-S(B) = 0.9 V.
(6) VG1-S(B) = 0.85 V.
(7) VG1-S(B) = 0.8 V.
VG2-S = 2.5 V; Tj =25 °C.
Fig 17. Amplifier B: transfer characteristics; typical
values
Fig 18. Amplifier B: output characteristics; typical
values
VG1−S (V)
0
2.0
1.6
0.8
1.2
0.4
001aad911
5
10
15
ID
(mA)
0
(1)
(2)
(3)
(4)
VDS (V)
04
3
12
001aad912
8
4
12
16
ID
(mA)
0
(7)
(6)
(5)
(4)
(3)
(2)
(1)


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