Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

BF1206F Datasheet(PDF) 10 Page - NXP Semiconductors

Part No. BF1206F
Description  Dual N-channel dual gate MOSFET
Download  20 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo 

BF1206F Datasheet(HTML) 10 Page - NXP Semiconductors

Zoom Inzoom in Zoom Outzoom out
 10 / 20 page
background image
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
10 of 20
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
8.1.2 Scattering parameters for amplifier A
8.2 Noise data for amplifier A
8.3 Dynamic characteristics for amplifier B
Table 9:
Scattering parameters for amplifier A
VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA; VDS(B) =0V; VG1-S(B) =0V; Tamb = 25 °C; typical values.
f (MHz)
s11
s21
s12
s22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
50
0.9923
−4.11
2.18
174.68
0.00038
102.27
0.995
−1.83
100
0.9930
−8.29
2.18
169.51
0.00080
85.65
0.996
−3.75
200
0.9877
−16.41
2.16
159.20
0.00161
80.93
0.995
−7.49
300
0.9802
−24.48
2.12
149.04
0.00233
76.76
0.994
−11.22
400
0.9705
−32.34
2.07
138.99
0.00303
73.21
0.992
−14.96
500
0.9596
−39.91
2.01
129.15
0.00354
69.83
0.989
−18.68
600
0.9483
−47.34
1.94
119.45
0.00394
67.19
0.987
−22.39
700
0.9361
−54.59
1.87
109.95
0.00426
65.26
0.984
−26.11
800
0.9239
−61.64
1.79
100.69
0.00453
63.89
0.981
−29.82
900
0.9129
−68.28
1.72
91.66
0.00457
64.06
0.979
−33.57
1000
0.9018
−74.57
1.64
82.86
0.00456
65.60
0.976
−37.31
Table 10:
Noise data for amplifier A
VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA.
f (MHz)
NFmin (dB)
Γopt
rn (ratio)
ratio
(deg)
400
1.0
0.78
26
0.84
800
1.1
0.87
53
0.87
Table 11:
Dynamic characteristics for amplifier B
Common source; Tamb =25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol Parameter
Conditions
Min
Typ
Max Unit
|yfs|
forward transfer admittance
Tj =25 °C
-
22
-
mS
Ciss(G1)
input capacitance at gate1
f = 100 MHz
[1] -
1.7
2.2
pF
Ciss(G2)
input capacitance at gate2
f = 100 MHz
[1] -
4.0
-
pF
Coss
output capacitance
f = 100 MHz
[1] -
0.85
-
pF
Crss
reverse transfer capacitance f = 100 MHz
[1] -30
45
fF
Gtr
transducer power gain
BS =BS(opt); BL =BL(opt)
[1]
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
-
32
-
dB
f = 400 MHz; GS = 2 mS; GL =1mS
-
29
-
dB
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
-
25
-
dB
NF
noise figure
f = 11 MHz; GS = 20 mS; BS = 0
-
4.5
-
dB
f = 400 MHz; YS = YS(opt)
-
0.9
1.5
dB
f = 800 MHz; YS = YS(opt)
-
1.0
1.6
dB


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn