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BF1206F Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. BF1206F
Description  Dual N-channel dual gate MOSFET
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF1206F Datasheet(HTML) 6 Page - NXP Semiconductors

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BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
6 of 20
Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(A) = 2.8 V; Tj =25 °C.
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(A) = 2.8 V; Tj =25 °C.
Fig 4.
Amplifier A: gate1 current as a function of
gate1 voltage; typical values
Fig 5.
Amplifier A: forward transfer admittance as a
function of drain current; typical values
VDS(A) = 2.8 V; VG2-S = 2.5 V, Tamb =25 °C.
VDS(A) = 2.8 V; VG2 = 2.5 V; RG1(A) = 270 kΩ; see
Figure 32.
Fig 6.
Amplifier A: drain current as a function of gate1
current; typical values
Fig 7.
Amplifier A: drain current as a function of gate1
supply voltage (=VGG); typical values
VG1−S (V)
0
2.5
2.0
1.0
1.5
0.5
001aad898
40
60
20
80
100
IG1
(
µA)
0
(1)
(2)
(3)
(4)
ID (mA)
016
12
48
001aad899
20
10
30
40
Yfs
(mS)
0
(1)
(2)
(3)
(4)
001aad900
IG1 (µA)
030
20
10
8
4
12
16
ID
(mA)
0
VGG (V)
03
2
1
001aad901
2
4
6
ID
(mA)
0


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