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BSP030 Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. BSP030
Description  N-channel enhancement mode vertical D-MOS transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BSP030 Datasheet(HTML) 5 Page - NXP Semiconductors

 
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1997 Mar 13
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP030
CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID =10 µA30
−−
V
VGSth
gate-source threshold voltage
VGS =VDS; ID =1mA
1
2.8
V
IDSS
drain-source leakage current
VGS = 0; VDS =24V
−−
500
nA
IGSS
gate leakage current
VGS = ±20 V; VDS =0
−−
±100
nA
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 2.5 A
−−
0.05
VGS = 10 V; ID =5A
−−
0.03
Ciss
input capacitance
VGS = 0; VDS =24V; f=1MHz
750
pF
Coss
output capacitance
VGS = 0; VDS =24V; f=1MHz
450
pF
Crss
reverse transfer capacitance
VGS = 0; VDS =24V; f=1MHz
200
pF
Qg
total gate charge
VGS = 10 V; VDD = 15 V; ID =5A;
Tamb =25 °C
28
nC
Qgs
gate-source charge
VGS = 10 V; VDD = 15 V; ID =5A;
Tamb =25 °C
2.5
nC
Qgd
gate-drain charge
VGS = 10 V; VDD = 15 V; ID =5A;
Tamb =25 °C
10.5
nC
td(on)
turn-on delay time
VGS = 0 to 10 V; VDD =15V;
ID = 1 A; RL =15 Ω; Rgen =6 Ω
14
ns
tf
fall time
VGS = 0 to 10 V; VDD =15V;
ID = 1 A; RL =15 Ω; Rgen =6 Ω
18
ns
ton
turn-on switching time
VGS = 0 to 10 V; VDD =15V;
ID = 1 A; RL =15 Ω; Rgen =6 Ω
32
60
ns
td(off)
turn-off delay time
VGS =10to0V; VDD =15V;
ID = 1 A; RL =15 Ω; Rgen =6 Ω
29
ns
tr
rise time
VGS =10to0V; VDD =15V;
ID = 1 A; RL =15 Ω; Rgen =6 Ω
33
ns
toff
turn-off switching time
VGS =10to0V; VDD =15V;
ID = 1 A; RL =15 Ω; Rgen =6 Ω
62
150
ns
Source-drain diode
VSD
source-drain diode forward voltage
VGD = 0; IS = 1.25 A
−−
1V
trr
reverse recovery time
IS = 1.25 A; di/dt = −100 A/µs
70
ns


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