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NCS2501 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. NCS2501
Description  1.1 mA 200 MHz Current Feedback Op Amp with Enable Feature
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NCS2501 Datasheet(HTML) 3 Page - ON Semiconductor

 
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NCS2501
http://onsemi.com
3
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
VS
11
VDC
Input Voltage Range
VI
vVS
VDC
Input Differential Voltage Range
VID
vVS
VDC
Output Current
IO
100
mA
Maximum Junction Temperature (Note 3)
TJ
150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
Thermal Resistance, Junction−to−Air
SO−8
SC70−6
SOT23−6
RqJA
172
215
154
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is limited
by the associated rise in junction temperature. For the plastic
packages, the maximum safe junction temperature is 150
°C.
If the maximum is exceeded momentarily, proper circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in the “overheated’’ condition for
an extended period can result in device damage.
Figure 3. Power Dissipation vs. Temperature
1400
1000
800
600
400
0
−50
25
100
150
Ambient Temperature (
°C)
1200
200
−25
0
75
125
50
SOT23 Pkg
SC70 Pkg
SO−8 Pkg


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