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BSN254 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BSN254
Description  N-channel enhancement mode vertical D-MOS transistors
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BSN254 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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2002 Feb 19
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
10
× 10 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID =10 µA; VGS = 0
250
−−
V
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
−−±100 nA
VGSth
gate-source threshold voltage
ID = 1 mA; VDS =VGS
0.8
2V
RDSon
drain-source on-state resistance
ID = 20 mA; VGS = 2.4 V
−−
7.5
ID = 300 mA; VGS =10V
2.8
5
IDSS
drain-source leakage current
VDS = 200 V; VGS =0
−−
1
µA
 Y
fs
transfer admittance
ID = 300 mA; VDS = 25 V
200
600
mS
Ciss
input capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
100
120
pF
Coss
output capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
21
30
pF
Crss
feedback capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
10
15
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 250 mA; VDD =50V;
VGS =0to10V
610
ns
toff
turn-off time
ID = 250 mA; VDD =50V;
VGS =10to0V
47
60
ns


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