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BSN254 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BSN254 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2002 Feb 19 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN254; BSN254A FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown • Low RDSon. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. PINNING - SOT54 variant PIN DESCRIPTION BSN254 BSN254A 1 gate source 2 drain gate 3 source drain handbook, halfpage 1 3 2 MAM146 s d g Fig.1 Simplified outline and symbol. note: various pinnings are available on request QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum 10 × 10 mm. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage (DC) − 250 V ID drain current (DC) − 310 mA Ptot total power dissipation Tamb ≤ 25 °C − 1W RDSon drain-source on-state resistance ID = 300 mA; VGS = 10 V 2.8 5 Ω VGSth gate-source threshold voltage ID = 1 mA; VDS =VGS − 2V SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − 250 V VGSO gate-source voltage (DC) open drain −±20 V ID drain current (DC) − 310 mA IDM peak drain current − 1.25 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1W Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C |
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