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NCP5210 Datasheet(PDF) 4 Page - ON Semiconductor

Part No. NCP5210
Description  3-in-1 PWM Dual Buck and Linear DDR Power Controller
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NCP5210 Datasheet(HTML) 4 Page - ON Semiconductor

 
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NCP5210
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PIN DESCRIPTION
Pin
Symbol
Description
1
COMP
VDDQ error amplifier compensation node.
2
FBDDQ
DDQ regulator feedback pin.
3
SS
Soft−start pin of DDQ and MCH.
4
PGND
Power ground.
5
VTT
VTT regulator output.
6
VDDQ
Power input for VTT linear regulator.
7
AGND
Analog ground connection and remote ground sense.
8
FBVTT
VTT regulator pin for closed loop regulation.
9
DDQ_REF
Reference voltage input of VTT regulator.
10
FB1P5
V1P5 switching regulator feedback pin.
11
GND_1P5
Power ground for V1P5 regulator.
12
BG_1P5
Gate driver output for V1P5 regulator low side N−Channel Power FET.
13
TG_1P5
Gate driver output for V1P5 regulator high side N−Channel Power FET.
14
BUF_Cut
Active HIGH control signal to activate S3 sleep state.
15
COMP_1P5
V1P5 error amplifier compensation node.
16
5VDUAL
5.0 V Dual supply input, which is monitored by undervoltage lock out circuitry.
17
BOOT
Gate driver input supply, which is monitored by undervoltage lock out circuitry, and a boost capacitor
connection between SWDDQ and this pin.
18
TG_DDQ
Gate driver output for DDQ regulator high side N−Channel Power FET.
19
BG_DDQ
Gate driver output for DDQ regulator low side N−Channel Power FET.
20
SW_DDQ
DDQ regulator switch node and current limit sense input.
21
TH_PAD
Copper pad on bottom of IC used for heatsinking. This pin should be connected to the ground plane under
the IC.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage (Pin 16) to AGND (Pin 7)
5VDUAL
−0.3, 6.0
V
BOOT (Pin 17) to AGND (Pin 7)
BOOT
−0.3, 14
V
Gate Drive (Pins 12, 13, 18, 19) to AGND (Pin 7)
Vg
−0.3 DC,
−4.0 for
t100 ns; 14
V
Input / Output Pins to AGND (Pin 7)
Pins 1−3, 5−6, 8−10, 14−15, 20
VIO
−0.3, 6.0
V
PGND (Pin 4), GND_1P5 (Pin 11) to AGND (Pin 7)
VGND
−0.3, 0.3
V
Thermal Characteristics, QFN−20 Plastic Package
Thermal Resistance Junction−to−Air
RqJA
35
°C/W
Operating Junction Temperature Range
TJ
0 to + 150
°C
Operating Ambient Temperature Range
TA
0 to + 70
°C
Storage Temperature Range
Tstg
− 55 to +150
°C
Moisture Sensitivity Level
MSL
2.0
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM)
"2.0 kV per JEDEC standard:
JESD22–A114. Machine Model (MM)
"200 V per JEDEC standard: JESD22–A115.
2. Latchup Current Maximum Rating:
"150 mA per JEDEC standard: JESD78.


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