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BSN10 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BSN10
Description  N-channel enhancement mode vertical D-MOS transistors
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BSN10 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN10; BSN10A
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
ID =10 µA; VGS = 0
50
−−
V
IDSS
drain-source leakage current
VDS = 40 V; VGS =0
−−
1
µA
±I
GSS
gate-source leakage current
±VGS = 20 V; VDS =0
−−
100
nA
VGS(th)
gate-source threshold voltage
ID = 1 mA; VGS = VDS
0.4
1.8
V
RDS(on)
drain-source on-resistance
ID = 100 mA; VGS = 10 V
815
ID = 100 mA; VGS =5 V
12
20
ID = 10 mA; VGS = 2.5 V
18
30
 Y
fs
transfer admittance
ID = 100 mA; VDS = 10 V
40
80
mS
Ciss
input capacitance
VDS = 10 V; VGS = 0; f = 1 MHz
815
pF
Coss
output capacitance
VDS = 10 V; VGS = 0; f = 1 MHz
715
pF
Crss
feedback capacitance
VDS = 10 V; VGS = 0; f = 1 MHz
25
pF
Switching times
ton
turn-on time
ID = 100 mA; VDD = 20 V;
VGS = 0 to 10 V
25
ns
toff
turn-off time
ID = 100 mA; VDD = 50 V;
VGS = 0 to 10 V
510
ns
Fig.2 Power derating curve.
handbook,
0
50
100
200
1
0
0.8
150
0.6
0.4
0.2
MDA690
Ptot
(W)
Tamb (°C)
Fig.3
Capacitance as a function of drain-source
voltage, typical values.
VGS = 0; f = 1 MHz; Tj = 25 °C.
handbook, halfpage
0
10
20
30
0
5
10
15
20
25
VDS (V)
C
(pF)
MRA781
(1)
(2)
(3)


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