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NCP1508 Datasheet(PDF) 4 Page - ON Semiconductor

Part No. NCP1508
Description  Up to 500 mA, 1 MHz, High Efficiency Synchronous Step−Down DC−DC Converter in DFN Package
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NCP1508 Datasheet(HTML) 4 Page - ON Semiconductor

 
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NCP1508
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (Vin = 3.6 V, Vo = 1.5 V, TA = 25°C, Fsyn = 600 kHz 50% Duty Cycle square wave for PWM
mode; TA = –30 to 85°C for Min/Max values, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
VCC Pin
Quiescent Current of SYNC Mode, Iout = 0 mA
Iq PWM
175
mA
Quiescent Current of PWM Mode, Iout = 0 mA
Iq PWM
185
mA
Quiescent Current of Pulsed Mode, Iout = 0 mA
Iq Pulsed
14
mA
Quiescent Current, SHD Low
Iq Off
0.1
1.0
mA
Input Voltage Range
Vin
2.5
5.2
V
SYNC Pin
Input Voltage
Vsync
−0.3
Vcc + 0.3
V
Frequency Operational Range
Fsync
500
600
1000
kHz
Minimum Synchronization Pulse Width
Dcsync Min
30
%
Maximum Synchronization Pulse Width
Dcsync Max
70
%
SYNC “H” Voltage Threshold
Vsynch
920
1200
mV
SYNC “L” Voltage Threshold
Vsyncl
400
830
mV
SYNC “H” Input Current, Vsync = 3.6 V
Isynch
2.2
mA
SYNC “L” Input Current, Vsync = 0 V
Isyncl
−0.5
mA
Output Level Selection Pins
Input Voltage
Vcb
−0.3
Vcc + 0.3
V
CB0, CB1 “H” Voltage Threshold
Vcb h
920
1200
mV
CB0, CB1 “L” Voltage Threshold
Vcb l
400
830
mV
CB0 “H” Input Current, CB = 3.6 V
Icb0 h
2.2
mA
CB0 “L” Input Current, CB = 0 V
Icb0 l
−0.5
mA
CB1 “H” Input Current, CB = 3.6 V
Icb1 h
0.3
1.0
mA
CB1 “L” Input Current, CB = 0 V
Icb1 l
−2.2
mA
Shutdown Pin
Input Voltage
Vshd
−0.3
Vcc + 0.3
V
SHD “H” Voltage Threshold
Vshd h
920
1200
mV
SHD “L” Voltage Threshold
Vshd l
400
830
mV
SHD “H” Input Current, SHD = 3.6 V
Ishd h
2.2
mA
SHD “L” Input Current, SHD = 0 V
Ishd l
−0.5
mA
Feedback Pin
Input Voltage
Vfb
−0.3
Vcc + 0.3
V
Input Current, Vfb = 1.5 V
Ifb
5.0
7.5
mA
SYNC PWM Mode Characteristics
Switching P−FET Current Limit
Ilim
800
mA
Duty Cycle (Note 2)
DC
100
%
Minimum On Time
Ton(min)
75
nsec
RDS(on) Switching P−FET and N−FET
RDS(on)
0.23
W
Switching P−FET and N−FET Leakage Current
Ileak
0
10
mA
Output Overvoltage Threshold
Vo
5.0
%


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