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NCP1395 Datasheet(PDF) 6 Page - ON Semiconductor

Part No. NCP1395
Description  High Performance Resonant Mode Controller
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NCP1395 Datasheet(HTML) 6 Page - ON Semiconductor

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NCP1395A/B
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (For typical values Tj = 25°C, for min/max values Tj = 0°C to +125°C, Max TJ = 150°C,
VCC = 11 V, unless otherwise noted.)
Characteristic
Pin
Symbol
Min
Typ
Max
Unit
SUPPLY SECTION
Turn−On Threshold Level, VCC Going Up – A Version
12
VCCON
12.3
13.3
14.3
V
Turn−On Threshold Level, VCC Going Up – B Version
12
VCCON
9.3
10.3
11.3
V
Minimum Operating Voltage after Turn−On
12
VCC(min)
8.3
9.3
10.3
V
Minimum Hysteresis between VCCON and VCC(min) − A Version
12
VhysteA
3.0
V
Minimum Hysteresis between VCCON and VCC(min) − B Version
12
VhysteB
1.0
V
Startup Current, VCC < VCCON
12
Istartup
300
mA
VCC Level at which the Internal Logic gets Reset
12
VCCreset
5.9
V
Internal IC Consumption, No Output Load on Pins 11/12, Fsw = 300 kHz
12
ICC1
1.6
mA
Internal IC consumption, 100 pF output load on pin 11 / 12, Fsw = 300 kHz
12
ICC2
2.3
mA
Consumption in fault mode (All drivers disabled, Vcc > VCC(min) )
12
ICC3
1.3
mA
VOLTAGE CONTROL OSCILLATOR (VCO)
Minimum Switching Frequency, Rt = 120 k
W on Pin 1, Vpin 5 = 0 V,
DT = 300 ns
1
Fsw min
48.5
50
51.5
kHz
Maximum Switching Frequency, Rfmax = 22 k
W on Pin 2, Vpin 5 >
6.0 V, DT = 300 ns − Tj = 25°C (Note 3)
2
Fsw max
0.9
1.0
1.11
MHz
Feedback Pin Swing above which
Df = 0
5
FBSW
6.0
V
VCO VCC Rejection, DVCC = 1.0 V, in Percentage of Fsw
PSRR
0.2
%/V
Operating Duty Cycle
11−10
DC
48
50
52
%
Reference Voltage for all Current Generations (Fosc, DT)
1, 3
VREF
1.86
2.0
2.14
V
Delay before any Driver Restart in Fault Mode
Tdel
20
ms
FEEDBACK SECTION
Internal Pulldown Resistor
5
Rfb
20
k
W
OTA Internal Offset Voltage
16
VREF_FB
2.325
2.5
2.675
V
Voltage on Pin 5 below which the FB Level has no VCO Action
5
Vfb_off
1.3
V
Voltage on Pin 5 below which the Controller Considers a Fault
5
Vfb_fault
0.6
V
Input Bias Current
16
IBias
100
nA
DC Transconductance Gain
15
OTAG
250
mS
Gain Product Bandwidth, Rload = 5.0 k
W
15
GBW
1.0
MHz
DRIVE OUTPUT
Output Voltage Rise Time @ CL = 100 pF, 10−90% of Output Signal
11−10
Tr
20
ns
Output Voltage Fall−Time @ CL = 100 pF, 10−90% of Output Signal
11−10
Tf
20
ns
Source Resistance
11−10
ROH
20
60
120
W
Sink Resistance
11−10
ROL
30
60
130
W
Deadtime with RDT = 127 kW from Pin 3 to GND
3
T_dead
270
300
390
ns
Maximum Deadtime with RDT = 540 kW from Pin 3 to GND
3
T_dead−max
1.0
ms
Minimum Deadtime, RDT = 30 kW from Pin 3 to GND
3
T_dead−min
150
ns
3. Room temperature only, please look at characterization data for evolution versus junction temperature.


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