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NCP662 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NCP662
Description  100 mA CMOS Low Iq Low-Dropout Voltage Regulator
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NCP662 Datasheet(HTML) 2 Page - ON Semiconductor

 
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NCP662, NCV662, NCP663, NCV663
http://onsemi.com
2
Figure 1. NCP662/NCV662 Typical Application
Diagram
This device contains 28 active transistors
Output
C2
+
Input
GND Enable
Vin
Vout
+
C1
OFF
ON
Figure 2. NCP663/NCV663 Typical Application
Diagram
This device contains 28 active transistors
Output
C2
+
Input
GND
N/C
Vin
Vout
+
C1
PIN FUNCTION DESCRIPTION
NCP662/
NCV662
NCP663/
NCV663
Pin Name
Description
1
1
GND
Power supply ground.
2
2
Vin
Positive power supply input voltage.
3
3
Vout
Regulated output voltage.
4
Enable
This input is used to place the device into low−power standby. When this input is pulled low, the
device is disabled. If this function is not used, Enable should be connected to Vin.
4
N/C
No internal connection.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage
Vin
6.0
V
Enable Voltage (NCP662/NCV662 ONLY)
Enable
−0.3 to Vin +0.3
V
Output Voltage
Vout
−0.3 to Vin +0.3
V
Power Dissipation and Thermal Characteristics
Power Dissipation
Thermal Resistance, Junction to Ambient
PD
RqJA
Internally Limited
330
W
°C/W
Operating Junction Temperature
TJ
+150
°C
Operating Ambient Temperature
NCP662/NCP663
NCV662/NCV663
TA
−40 to +85
−40 to +125
°C
Storage Temperature
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015
Machine Model Method 200 V
2. Latch up capability (85
°C) "100 mA DC with trigger voltage.


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