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LMH6321 Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LMH6321
Description  300 mA High Speed Buffer with Adjustable Current Limit
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMH6321 Datasheet(HTML) 4 Page - National Semiconductor (TI)

 
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±5V Electrical Characteristics
The following specifications apply for Supply Voltage = ±5V, V
CM =0,RL
≥ 100 kΩ and R
S =50
Ω,C
L Open, unless otherwise
noted. Boldface limits apply for T
A =TJ =TMIN to TMAX; all other limits TA =TJ = 25˚C.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
A
V
Voltage Gain
R
L =1k
Ω,V
IN = ±3V
0.99
0.98
0.994
V/V
R
L =50
Ω,V
IN = ±3V
0.86
0.84
0.92
V
OS
Offset Voltage
R
L =1k
Ω,R
S =0V
±2.5
±35
±50
mV
I
B
Input Bias Current
V
IN = 0V, RL =1k
Ω,R
S =0V
±2
±15
±17
µA
R
IN
Input Resistance
R
L =50
250
k
C
IN
Input Capacitance
3.5
pF
R
O
Output Resistance
I
OUT = ±10 mA
5
I
S
Power Supply Current
R
L = ,VIN = 0V
10
13.5
14.7
750 µA into CL Pin
14
17.5
19.5
V
O1
Positive Output Swing
I
O = 300 mA, RS = 0V, VIN = ±VS
1.3
0.9
1.9
V
Negative Output Swing
I
O = 300 mA, RS = 0V, VIN = ±VS
−1.3
−0.5
−0.1
V
O2
Positive Output Swing
R
L =1k
Ω,R
S = 0V, VIN = ±VS
3.2
2.9
3.5
V
Negative Output Swing
R
L =1k
Ω,R
S = 0V, VIN = ±VS
−3.5
−3.1
−2.9
V
V
O3
Positive Output Swing
R
L =50
Ω,R
S = 0V, VIN = ±VS
2.8
2.5
3.1
V
Negative Output Swing
R
L =50
Ω,R
S = 0V, VIN = ±VS
−3.0
−2.6
−2.4
V
PSSR
Power Supply Rejection Ratio
R
L =1k
Ω,V
IN =0,
V
S = ±5V to ±15V
Positive
58
54
66
dB
Negative
58
54
64
I
SC1
Output Short Circuit Current
V
O = 0V, Program
Current into C
L =25µA
Sourcing
V
IN = +3V
4.5
4.5
9
14.0
15.5
mA
Sinking
V
IN = −3V
4.5
4.5
9
14.0
15.5
V
O = 0V, Program
Current into C
L = 750
µA
Sourcing
V
IN = +3V
275
270
290
305
320
Sinking
V
IN = −3V
275
270
290
310
320
I
SC2
Output Short Circuit Current
Source
R
S = 0V, VIN = +3V
(Notes 5, 7)
300
470
mA
Output Short Circuit Current
Sink
R
S = 0V, VIN = −3V
(Notes 5, 7)
300
400
SR
Slew Rate
V
IN = ±2VPP,RL =1k
450
V/µs
V
IN = ±2VPP,RL =50
210
BW
−3 dB Bandwidth
V
IN = ±20 mVPP,RL =50
90
MHz
LSBW
Large Signal Bandwidth
V
IN =2VPP,RL =50
39
MHz
T
SD
Thermal Shutdown
Temperature
170
˚C
Hysteresis
10
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