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LM95241 Datasheet(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LM95241
Description  Dual Remote Diode Temperature Sensor with SMBus Interface and TruTherm™ Technology (65nm/90nm)
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LM95241 Datasheet(HTML) 6 Page - National Semiconductor (TI)

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Logic Electrical Characteristics (Continued)
SMBus Communication
20199709
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
guaranteed to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the
listed test conditions. Operation of the device beyond the maximum Operating Ratings is not recommended.
Note 2: When the input voltage (VI) at any pin exceeds the power supplies (VI < GND or VI > VDD), the current at that pin should be limited to 5 mA.
Parasitic components and or ESD protection circuitry are shown in the figures below for the LM95241’s pins. Care should be taken not to forward bias the parasitic
diode, D1, present on pins: D1+, D2+, D1−, D2−. Doing so by more than 50 mV may corrupt the temperature measurements.
Pin
#
Label Circuit
All Input ESD Protection Structure Circuits
1
D1+
A
Circuit A
Circuit C
Circuit B
2
D1−
A
3
D2+
A
4
D2−
A
5
GND
B
6V
DD
B
7
SMBDAT
C
8
SMBCLK
C
Note 3: Thermal resistance junction-to-ambient when attached to a printed circuit board with 1oz. foil and no air flow:
– MSOP-8 = 210˚C/W
Note 4: Human body model (HBM), 100pF discharged through a 1.5k
Ω resistor. Machine model (MM), 200pF discharged directly into each pin. Charged Device
Model (CDM) simulates a pin slowly acquiring charge (such as from a device sliding down the feeder in an automated assembler) then rapidly being discharged.
Note 5: Reflow temperature profiles are different for packages containing lead (Pb) than for those that do not.
Note 6: Typical figures are at TA = 25˚C and represent most likely parametric norms at the time of product characterization. The typical specifications are not
guaranteed.
Note 7: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Note 8: Local temperature accuracy does not include the effects of self-heating. The rise in temperature due to self-heating is the product of the internal power
dissipation of the LM95241 and the thermal resistance. See (Note 3) for the thermal resistance to be used in the self-heating calculation.
Note 9: The accuracy of the LM95241CIMM is guaranteed when using a typical thermal diode of an Intel processor on a 65 nm process or an MMBT3904
diode-connected transistor, as selected in the Remote Diode Model Select register. See typical performance curve for performance with Intel processor on a 90nm
process.
Note 10: Quiescent current will not increase substantially when the SMBus is active.
Note 11: This specification is provided only to indicate how often temperature data is updated. The LM95241 can be read at any time without regard to conversion
state (and will yield last conversion result).
Note 12: The output rise time is measured from (VIN(0)max + 0.15V) to (VIN(1)min − 0.15V).
Note 13: The output fall time is measured from (VIN(1)min - 0.15V) to (VIN(1)min + 0.15V).
Note 14: Holding the SMBDAT and/or SMBCLK lines Low for a time interval greater than tTIMEOUT will reset the LM95241’s SMBus state machine, therefore setting
SMBDAT and SMBCLK pins to a high impedance state.
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