DS90LV049HMTX datasheet(2/10 Pages) NSC

Part #	DS90LV049HMTX

Description	High Temperature 3V LVDS Dual Line Driver and Receiver Pair

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Manufacturer	NSC [National Semiconductor (TI)]

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (V

DD)

−0.3Vto+4V

LVCMOS Input Voltage (D

IN)

−0.3Vto(V

DD + 0.3 V)

LVDS Input Voltage (R

IN+,RIN-)

−0.3 V to +3.9 V

Enable Input Voltage (EN, EN)

−0.3Vto(V

DD + 0.3 V)

LVCMOS Output Voltage (R

OUT)

−0.3Vto(V

DD + 0.3 V)

LVDS Output Voltage

(D

OUT+,DOUT-)

−0.3 V to +3.9 V

LVCMOS Output Short Circuit

Current (R

OUT)

100 mA

LVDS Output Short Circuit

Current (D

OUT+,DOUT−)24 mA

LVDS Output Short Circuit

Current Duration(D

OUT+,DOUT−)

Continuous

Storage Temperature Range

−65˚C to +150˚C

Lead Temperature Range

Soldering (4 sec.)

+260˚C

Maximum Junction Temperature

+150˚C

Maximum Package Power Dissipation @ +25˚C

MTC Package

866 mW

Derate MTC Package

6.9 mW/˚C above +25˚C

ESD Rating

(HBM, 1.5 k

Ω, 100 pF)

≥ 7kV

(MM, 0

Ω, 200 pF)

≥ 250 V

Recommended Operating

Conditions

Min

Typ

Max

Units

Supply Voltage (V

DD)

+3.0

+3.3

+3.6

V

Operating Free Air

Temperature (T

A)

−40

+25

+125

˚C

Electrical Characteristics

Over supply voltage and operating temperature ranges, unless otherwise specified. (Notes 2, 4, 6)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

LVCMOS Input DC Specifications (Driver Inputs, ENABLE Pins)

V

IH

Input High Voltage

D

IN

EN

2.0

V

DD

V

IL

Input Low Voltage

GND

0.8

V

I

IH

Input High Current

V

IN =VDD

−10

1

+10

µA

I

IL

Input Low Current

V

IN = GND

−10

−0.1

+10

µA

V

CL

Input Clamp Voltage

I

CL = −18 mA

−1.5

−0.6

V

LVDS Output DC Specifications (Driver Outputs)

|V

OD |

Differential Output Voltage

R

L = 100

Ω

(Figure 1)

250

350

450

mV

∆V

OD

Change in Magnitude of V

OD for

Complementary Output States

1

35

|mV|

V

OS

Offset Voltage

1.125

1.23

1.375

V

∆V

OS

Change in Magnitude of V

OS for

Complementary Output States

1

25

|mV|

I

OS

Output Short Circuit Current

(Note 14)

ENABLED,

D

IN =VDD,DOUT+ =0Vor

D

IN = GND, DOUT− =0V

D

OUT−

D

OUT+

−5.8

−9.0

mA

I

OSD

Differential Output Short Circuit

Current (Note 14)

ENABLED, V

OD =0V

−5.8

−9.0

mA

I

OFF

Power-off Leakage

V

OUT =0Vor3.6 V

V

DD =0Vor Open

−20

±1

+20

µA

I

OZ

Output TRI-STATE Current

EN=0Vand EN=V

DD

V

OUT =0VorVDD

−10

±1

+10

µA

LVDS Input DC Specifications (Receiver Inputs)

V

TH

Differential Input High Threshold

V

CM = 1.2 V, 0.05 V, 2.35 V

−15

35

mV

V

TL

Differential Input Low Threshold

R

IN+

R

IN-

-100

−15

mV

V

CMR

Common-Mode Voltage Range

V

ID = 100 mV, VDD=3.3 V

0.05

3

V

I

IN

Input Current

V

DD=3.6 V

V

IN =0 V or 2.8 V

−12

±4

+12

µA

V

DD=0 V

V

IN =0Vor2.8Vor3.6 V

−10

±1

+10

µA

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