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DS90LV028AH Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. DS90LV028AH
Description  High Temperature 3V LVDS Dual Differential Line Receiver
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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DS90LV028AH Datasheet(HTML) 2 Page - National Semiconductor (TI)

   
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to +4V
Input Voltage (R
IN+, RIN−)
−0.3V to +3.9V
Output Voltage (R
OUT)
−0.3V to V
CC + 0.3V
Maximum Package Power Dissipation @ +25˚C
M Package
1025 mW
Derate M Package
8.2 mW/˚C above +25˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range Soldering
(4 sec.)
+260˚C
Maximum Junction Temperature
+150˚C
ESD Rating (Note 4)
(HBM 1.5 k
Ω, 100 pF)
≥ 7kV
(EIAJ 0
Ω, 200 pF)
≥ 500 V
Recommended Operating
Conditions
Min
Typ
Max
Units
Supply Voltage (V
CC)
+3.0
+3.3
+3.6
V
Receiver Input Voltage
GND
3.0
V
Operating Free Air
Temperature (T
A)
−40
25
+125
˚C
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3)
Symbol
Parameter
Conditions
Pin
Min
Typ
Max
Units
V
TH
Differential Input High Threshold
V
CM = +1.2V, 0V, 3V (Note 12)
R
IN+,
+100
mV
V
TL
Differential Input Low Threshold
R
IN
−100
mV
I
IN
Input Current
V
IN = +2.8V
V
CC = 3.6V or 0V
−10
±1
+10
µA
V
IN = 0V
−10
±1
+10
µA
V
IN = +3.6V
V
CC = 0V
-20
+20
µA
V
OH
Output High Voltage
I
OH = −0.4 mA, VID = +200 mV
R
OUT
2.7
3.1
V
I
OH = −0.4 mA, Inputs terminated
2.7
3.1
V
I
OH = −0.4 mA, Inputs shorted
2.7
3.1
V
V
OL
Output Low Voltage
I
OL = 2 mA, VID = −200 mV
0.3
0.5
V
I
OS
Output Short Circuit Current
V
OUT = 0V (Note 5)
−15
−50
−100
mA
V
CL
Input Clamp Voltage
I
CL = −18 mA
−1.5
−0.8
V
I
CC
No Load Supply Current
Inputs Open
V
CC
5.4
9
mA
Switching Characteristics
V
CC = +3.3V ± 10%, TA = −40˚C to +125˚C (Notes 6, 7)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t
PHLD
Differential Propagation Delay High to Low
C
L = 15 pF
1.0
1.6
2.5
ns
t
PLHD
Differential Propagation Delay Low to High
V
ID = 200 mV
1.0
1.7
2.5
ns
t
SKD1
Differential Pulse Skew |t
PHLD −tPLHD| (Note 8)
(Figure 1 and Figure 2)
0
50
650
ps
t
SKD2
Differential Channel-to-Channel Skew-same device (Note 9)
0
0.1
0.5
ns
t
SKD3
Differential Part to Part Skew (Note 10)
0
1.0
ns
t
SKD4
Differential Part to Part Skew (Note 11)
0
1.5
ns
t
TLH
Rise Time
325
800
ps
t
THL
Fall Time
225
800
ps
f
MAX
Maximum Operating Frequency (Note 13)
200
250
MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground unless otherwise
specified (such as VID).
Note 3: All typicals are given for: VCC = +3.3V and TA = +25˚C.
Note 4: ESD Rating: HBM (1.5 k
Ω, 100 pF) ≥ 7kV
EIAJ (0
Ω, 200 pF) ≥ 500V
Note 5: Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. Only one output should be shorted at a time, do not
exceed maximum junction temperature specification.
Note 6: CL includes probe and jig capacitance.
Note 7: Generator waveform for all tests unless otherwise specified:f=1 MHz, ZO =50Ω,tr and tf (0% to 100%) ≤ 3 ns for RIN.
Note 8: tSKD1 is the magnitude difference in differential propagation delay time between the positive-going-edge and the negative-going-edge of the same channel.
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