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BSH201 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BSH201 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page  Philips Semiconductors Product specification P-channel enhancement mode BSH201 MOS transistor Fig.1. Normalised power dissipation. PD% = 100 ⋅P D/PD 25 ˚C = f(Ta) Fig.2. Normalised continuous drain current. ID% = 100 ⋅I D/ID 25 ˚C = f(Ta); conditions: VGS ≤ -10 V Fig.3. Safe operating area. T a = 25 ˚C I D & IDM = f(VDS); IDM single pulse; parameter tp Fig.4. Transient thermal impedance. Z th j-a = f(t); parameter D = tp/T Fig.5. Typical output characteristics, T j = 25 ˚C. I D = f(VDS); parameter VGS Fig.6. Typical on-state resistance, T j = 25 ˚C. R DS(ON) = f(ID); parameter VGS Normalised Power Dissipation, PD (%) 0 20 40 60 80 100 120 0 25 50 75 100 125 150 Ambient Temperature, Ta (C) 0.1 1 10 100 1000 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse width, tp (s) Peak Pulsed Drain Current, IDM (A) single pulse D = 0.5 0.2 0.1 0.05 0.02 tp D = tp/T D P T Normalised Drain Current, ID (%) 0 20 40 60 80 100 120 0 25 50 75 100 125 150 Ambient Temperature, Ta (C) BSH201 -1 -0.8 -0.6 -0.4 -0.2 0 -2 -1.5 -1 -0.5 0 Drain-Source Voltage, VDS (V) Drain current, ID (A) -1.5 V -1.9 V VGS = -10 V -4.5 V -1.7 V Tj = 25 C -2.1 V -2.3 V -2.5 V BSH201 0.001 0.01 0.1 1 10 1 10 100 1000 Drain-Source Voltage, VDS (V) Peak Pulsed Drain Current, IDM (A) d.c. 100 ms 10 ms 1 ms RDS(on) = VDS/ ID tp = 10us 100 us PHP222 0 1 2 3 4 5 6 7 8 9 10 -0.5 -0.4 -0.3 -0.2 -0.1 0 Drain Current, ID (A) Drain-Source On Resistance, RDS(on) (Ohms) VGS = -10 V -2.3 V -1.9 V Tj = 25 C -2.5 V -2.1 V -1.7 V -1.5 V -4.5 V August 1998 3 Rev 1.000 |
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