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LH28F640BFHG-PBTLZ7 Datasheet(PDF) 4 Page - Sharp Electrionic Components

Part No. LH28F640BFHG-PBTLZ7
Description  64M (x16) Flash Memory
Download  36 Pages
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Maker  SHARP [Sharp Electrionic Components]
Homepage  http://sharp-world.com/
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LH28F640BFHG-PBTLZ7 Datasheet(HTML) 4 Page - Sharp Electrionic Components

 
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LH28F640BFHG-PBTLZ7
64Mbit (4Mbit
×16)
Page Mode Dual Work Flash MEMORY
64M density with 16Bit I/O Interface
High Performance Reads
• 80/35ns 8-Word Page Mode
Configurative 4-Plane Dual Work
• Flexible Partitioning
• Read operations during Block Erase or (Page Buffer)
Program
• Status Register for Each Partition
Low Power Operation
• 2.7V Read and Write Operations
• VCCQ for Input/Output Power Supply Isolation
• Automatic Power Savings Mode Reduces ICCR
in Static Mode
Enhanced Code + Data Storage
• 5
µs Typical Erase/Program Suspends
OTP (One Time Program) Block
• 4-Word Factory-Programmed Area
• 4-Word User-Programmable Area
High Performance Program with Page Buffer
• 16-Word Page Buffer
• 5
µs/Word (Typ.) at 12V V
PP
Operating Temperature -40
°C to +85°C
CMOS Process (P-type silicon substrate)
Flexible Blocking Architecture
• Eight 4K-word Parameter Blocks
• One-hundred and twenty-seven 32K-word Main
Blocks
• Bottom Parameter Location
Enhanced Data Protection Features
• Individual Block Lock and Block Lock-Down with
Zero-Latency
• All blocks are locked at power-up or device reset.
• Absolute Protection with VPP≤VPPLK
• Block Erase, Full Chip Erase, (Page Buffer) Word
Program Lockout during Power Transitions
Automated Erase/Program Algorithms
• 3.0V Low-Power
11µs/Word (Typ.)
Programming
• 12V No Glue Logic 9
µs/Word (Typ.)
Production Programming and 0.5s Erase (Typ.)
Cross-Compatible Command Support
• Basic Command Set
• Common Flash Interface (CFI)
Extended Cycling Capability
• Minimum 100,000 Block Erase Cycles
0.75mm pitch 48-Ball CSP (8mm
×11mm)
ETOXTM* Flash Technology
Not designed or rated as radiation hardened
The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low
power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can
operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability greatly extends
battery life for portable applications.
The product provides high performance asynchronous page mode. It allows code execution directly from Flash, thus
eliminating time consuming wait states. Furthermore, its newly configurative partitioning architecture allows flexible dual
work operation.
The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main
Blocks that provide maximum flexibility for safe nonvolatile code and data storage.
Fast program capability is provided through the use of high speed Page Buffer Program.
Special OTP (One Time Program) block provides an area to store permanent code such as a unique number.
* ETOX is a trademark of Intel Corporation.
Rev. 2.44


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