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LH28F640BFHG-PBTLZ7 Datasheet(PDF) 30 Page - Sharp Corporation

Part # LH28F640BFHG-PBTLZ7
Description  64M (x16) Flash Memory
Download  36 Pages
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Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation

LH28F640BFHG-PBTLZ7 Datasheet(HTML) 30 Page - Sharp Corporation

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LHF64FD5
28
Rev. 2.44
1.2.7 Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance(3)
NOTES:
1. Typical values measured at VCC=3.0V, VPP=3.0V or 12V, and TA=+25°C. Assumes corresponding lock bits
are not set. Subject to change based on device characterization.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (WE# or CE# going high) until SR.7 going "1".
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter
than tERES and its sequence is repeated, the block erase operation may not be finished.
VCC=2.7V-3.6V, TA=-40°C to +85°C
Symbol
Parameter
Notes
Page Buffer
Command is
Used or not
Used
VPP=VPPH1
(In System)
VPP=VPPH2
(In Manufacturing)
Unit
Min.
Typ.(1) Max.(2)
Min.
Typ.(1) Max.(2)
tWPB
4K-Word Parameter Block
Program Time
2
Not Used
0.05
0.3
0.04
0.12
s
2
Used
0.03
0.12
0.02
0.06
s
tWMB
32K-Word Main Block
Program Time
2
Not Used
0.38
2.4
0.31
1.0
s
2
Used
0.24
1.0
0.17
0.5
s
tWHQV1/
tEHQV1
Word Program Time
2
Not Used
11
200
9
185
µs
2
Used
7
100
5
90
µs
tWHOV1/
tEHOV1
OTP Program Time
2
Not Used
36
400
27
185
µs
tWHQV2/
tEHQV2
4K-Word Parameter Block
Erase Time
2
-
0.3
4
0.2
4
s
tWHQV3/
tEHQV3
32K-Word Main Block
Erase Time
2
-
0.6
5
0.5
5
s
Full Chip Erase Time
2
80
700
65
700
s
tWHRH1/
tEHRH1
(Page Buffer) Program Suspend
Latency Time to Read
4-
5
10
5
10
µs
tWHRH2/
tEHRH2
Block Erase Suspend
Latency Time to Read
4-
5
20
5
20
µs
tERES
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
5-
500
500
µs


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