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DIM200WLS12-A000 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part No. DIM200WLS12-A000
Description  IGBT Chopper Module - Lower Arm Control
Download  8 Pages
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Maker  DYNEX [Dynex Semiconductor]
Homepage  http://www.dynexsemi.com
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DIM200WLS12-A000 Datasheet(HTML) 4 Page - Dynex Semiconductor

   
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DIM200WLS12-A000
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
600
50
20
240
95
25
2
30
150
13
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C = 200A
V
GE = ±15V
V
CE = 600V
R
G(ON) = RG(OFF) = 4.7Ω
L ~ 70nH
I
F = 200A, VR = 600V,
dI
F/dt = 2300A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS - IGBT ARM
T
case = 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
800
70
27
385
110
40
50
160
20
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C = 200A
V
GE = ±15V
V
CE = 600V
R
G(ON) = RG(OFF) = 4.7Ω
L ~ 70nH
I
F = 200A, VR = 600V,
dI
F/dt = 2000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC


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