DIM200WLS12-A000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/8

www.dynexsemi.com

Test Conditions

V

V

V

I

V

V

DC

t

I

I

V

-

-

T

I

1

t

I

2

IEC 60747-9

Parameter

Collector cut-off current

(IGBT and Diode arm)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

(IGBT and Diode arm)

Input capacitance

Module inductance - per arm

Internal transistor resistance

Short circuit. I

SC

ELECTRICAL CHARACTERISTICS

T

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

†

I

F

I

FM

V

F

†

C

ies

L

M

R

INT

SC

Data

Units

mA

mA

µA

V

V

V

A

A

V

V

nF

nH

m

Ω

A

A

Max.

0.25

6

1

6.5

2.7

3.1

200

400

2.5

2.6

-

-

-

-

-

Typ.

-

-

-

5.5

2.2

2.6

-

-

2.2

2.3

33

20

0.23

1375

1125

Min.

-

-

-

4.5

-

-

-

-

-

-

-

-

-

-

-

Note:

L* is the circuit inductance + L

M