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DIM200PKM33-A000 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part No. DIM200PKM33-A000
Description  IGBT Chopper Module
Download  6 Pages
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Maker  DYNEX [Dynex Semiconductor]
Homepage  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM200PKM33-A000 Datasheet(HTML) 4 Page - Dynex Semiconductor

  DIM200PKM33-A000 Datasheet HTML 1Page - Dynex Semiconductor DIM200PKM33-A000 Datasheet HTML 2Page - Dynex Semiconductor DIM200PKM33-A000 Datasheet HTML 3Page - Dynex Semiconductor DIM200PKM33-A000 Datasheet HTML 4Page - Dynex Semiconductor DIM200PKM33-A000 Datasheet HTML 5Page - Dynex Semiconductor DIM200PKM33-A000 Datasheet HTML 6Page - Dynex Semiconductor  
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DIM200PKM33-A000
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C = 200A
V
GE = ±15V
V
CE = 1800V
R
G(ON) = RG(OFF) =10Ω
C
ge = 33nF
L ~ 100nH
I
F = 200A, VR = 1800V,
dI
F/dt = 1100A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS - IGBT ARM
T
case = 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1600
250
240
640
300
420
190
185
220
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C = 200A
V
GE = ±15V
V
CE = 1800V
R
G(ON) = RG(OFF) =10Ω
C
ge = 33nF
L ~ 100nH
I
F = 200A, VR = 1800V,
dI
F/dt = 1000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Typ.
1300
200
170
640
250
290
6
115
165
130


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